One time programmable read-only memory comprised of fuse and two selection transistors

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United States of America Patent

APP PUB NO 20060203591A1
SERIAL NO

11078571

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Abstract

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A one time programmable read-only memory (OTPROM) device includes a plurality of memory cells, where a memory cell of the OTPROM device comprises a fuse indicating a first memory state of the memory cell if the fuse is destroyed and a second memory state of the memory cell if the fuse is not destroyed, a first transistor coupled to the fuse, and a second transistor serially coupled to the first transistor. Both the first transistor and the second transistor are turned on to select the memory cell, and at least one of the first transistor and the second transistor are turned off to unselect the memory cell. The fuse insulation layer of the fuse and the gate insulation layers of the first and second transistors share a common insulation layer formed in the same fabrication process.

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Patent Owner(s)

Patent OwnerAddress
LEADIS TECHNOLOGY INC800 W CALIFORNIA AVENUE SUITE 200 SUNNYVALE CA 94086

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Dong Kyu Suwon, KR 68 268

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