Antireflective coating for semiconductor devices and method for the same
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United States of America Patent
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Mar 10, 2009
Grant Date -
Sep 21, 2006
app pub date -
Mar 15, 2005
filing date -
Mar 15, 2005
priority date (Note) -
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Abstract
According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.
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