Plasma enhanced atomic layer deposition system and method

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United States of America Patent

APP PUB NO 20060210723A1
SERIAL NO

11084004

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Abstract

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A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber, and introducing a second process material within the process chamber. A first level of electromagnetic power is coupled to the process chamber to generate a plasma that releases contaminants from at least one of a process chamber component or the substrate, and a second level of electromagnetic power higher than the first level is coupled to the process chamber during introduction of the second process material to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishizaka, Tadahiro Clifton Park, NY 118 6906

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