Plasma enhanced atomic layer deposition system and method

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United States of America Patent

PATENT NO 8486845
APP PUB NO 20060211224A1
SERIAL NO

11084024

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Abstract

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A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsuda, Tsukasa Delmar, US 111 1595

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