Plasma enhanced atomic layer deposition system
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United States of America Patent
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Issued Date -
Sep 28, 2006
app pub date -
Mar 28, 2005
filing date -
Mar 28, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A plasma enhanced atomic layer deposition (PEALD) system includes a processing chamber defining an isolated processing space within the processing chamber, and a substrate holder provided within the processing chamber and configured to support a substrate. A first process material supply system is configured to supply a first process material to the processing chamber, a second process material supply system is configured to supply a second process material to the processing chamber and a power source is configured to couple electromagnetic power to the processing chamber. A contaminant shield is positioned along a periphery of the substrate holder and configured to impede external contaminants that permeate the chamber from traveling to a region of the substrate holder, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
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