Memory device and manufacturing method the same
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United States of America Patent
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Oct 4, 2011
Issued Date -
N/A
app pub date -
Mar 27, 2006
filing date -
Mar 28, 2005
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
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