Reduced porosity high-k thin film mixed grains for thin film capacitor applications

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United States of America Patent

SERIAL NO

11096685

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Abstract

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A method including forming a layer of a first ceramic material on a substrate; and after forming the layer, forming a second ceramic material on the layer of the first ceramic material, the formed second ceramic material including an average grain size less than a grain size of the first ceramic material. An apparatus including a first electrode; a second electrode; and a sintered ceramic material, wherein the ceramic material comprises first ceramic grains defining grain boundaries therebetween and second ceramic grains having an average grain size smaller than a grain size of the first ceramic grains. A system including a device including a microprocessor, the microprocessor coupled to a circuit board through a substrate, the substrate including a capacitor structure formed on a surface, the capacitor structure including a first electrode, a second electrode, and a sintered ceramic material disposed between the first electrode and the second electrode.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BLVD SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Palanduz, Cengiz A Chandler, AZ 42 360

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