Atomic layer deposition of high k metal silicates
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United States of America Patent
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Issued Date -
Oct 12, 2006
app pub date -
Aug 18, 2003
filing date -
Aug 18, 2002
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Abandoned
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Abstract
The present invention relates to the atomic layer deposition ('ALD') of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.
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