METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING A MEMORY CELL WITH A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE
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United States of America Patent
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app pub date -
May 30, 2006
filing date -
Jun 26, 2003
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Abandoned
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Abstract
A method for making a semiconductor device may include forming at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto. The NDR device may include a superlattice including a plurality of stacked groups of layers, with each group of layers of the superlattice including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one nonsemiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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