Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
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United States of America Patent
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Oct 6, 2009
Grant Date -
Oct 26, 2006
app pub date -
Jan 13, 2006
filing date -
Jan 14, 2005
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Abstract
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
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