Method of operating a complementary bit resistance memory sensor and method of operation
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United States of America Patent
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Apr 29, 2008
Grant Date -
Nov 2, 2006
app pub date -
Jun 28, 2006
filing date -
Nov 20, 2001
priority date (Note) -
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Abstract
A method and apparatus are disclosed for sensing the resistance state of a resistance-based memory element using complementary resistance-based elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the high and low resistance elements to determine the resistance state of an element being read.
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