Semiconductor sensor and method for manufacturing same
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United States of America Patent
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Issued Date -
Nov 2, 2006
app pub date -
Feb 26, 2004
filing date -
Feb 26, 2003
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a semiconductor sensor and method for manufacturing same, which makes it possible to form on a Si substrate an InSb or InAs film having a high electron mobility and a comparatively high sheet resistance, and to provide a highly sensitive, low power consumption, high quality element industrially. On a (111) Si substrate, a first compound semiconductor layer composed of at least two elements selected from the group of Ga, Al, In, As, Sb and P is formed, and on the first compound semiconductor layer, an InSb or InAs layer is formed as a second compound semiconductor layer, thereby being able to achieve a high electron mobility, high resistance film with a thickness of about 1 .mu.m. A Hall element is formed by using the resultant thin film, which makes it possible to form a highly sensitive, comparatively high resistance element.
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