Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof
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United States of America Patent
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Issued Date -
Nov 9, 2006
app pub date -
May 5, 2005
filing date -
May 5, 2005
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Abandoned
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Abstract
A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.
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