Single-crystalline gallium nitride substrate

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United States of America Patent

APP PUB NO 20060255339A1
SERIAL NO

11432502

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Abstract

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The present invention relates to a single-crystalline gallium nitride substrate having an n-doping concentration of about 0.7.times.10.sup.18 to about 3.times.10.sup.18/cm.sup.3 and a thermal conductivity of at least about 1.5 W/cmK at a room temperature (300 K), and being appropriately applied in manufacturing of a light emitting device.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG CORNING PRECISION GLASS CO LTDSOUTH KOREA GYEONGBUK GUMI GUMI CHUNGCHEONGBUK-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Chong Don Seongnam-si, KR 1 1
Lee, Changho Suwon-si, KR 101 552
Lee, Hae Yong Gwangmyeong-si, KR 14 51
Shin, Hyun Min Seoul, KR 12 28

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