Atomic layer deposition of high-k metal oxides
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United States of America Patent
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Issued Date -
Nov 16, 2006
app pub date -
Aug 18, 2003
filing date -
Aug 18, 2002
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Abstract
The present invention relates to the atomic layer deposition ('ALD') of high k dielectric layers of metal oxides containing Group 4 metals, including hafnium oxide, zirconium oxide, and titanium oxide. More particularly, the present invention relates to the ALD formation of Group 4 metal oxide films using an metal alkyl amide as a metal organic precursor and ozone as a co-reactant.
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