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Abstract

A method for making a semiconductor device may include providing a semiconductor substrate and forming at least one non-volatile memory cell. Spaced apart source and drain regions may be formed, and a superlattice channel may be formed between the source and drain regions. The superlattice channel may include a plurality of stacked groups of layers on the substrate between the source and drain regions. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A floating gate may be formed adjacent the superlattice channel, and a control gate may be formed adjacent the floating gate.

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First Claim