Multilayer multicomponent high-k films and methods for depositing the same
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United States of America Patent
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Issued Date -
Nov 23, 2006
app pub date -
Apr 7, 2006
filing date -
Apr 7, 2005
priority date (Note) -
Abandoned
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Abstract
The present invention provides systems and methods for forming a multi-layer, multi-component high-k dielectric film. In some embodiments, the present invention provides systems and methods for forming high-k dielectric films that comprise hafnium, titanium, oxygen, nitrogen, and other components. In a further aspect of the present invention, the dielectric films are formed having composition gradients.
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