Semiconductor Device Including Shallow Trench Isolation (STI) Regions with a Superlattice Therebetween
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United States of America Patent
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app pub date -
Jun 20, 2006
filing date -
Jun 26, 2003
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Abstract
A semiconductor device may include a semiconductor substrate and a plurality of shallow trench isolation (STI) regions in the substrate. More particularly, at least some of the STI regions may include divots therein. The semiconductor device may further include a respective superlattice between adjacent STI regions, and respective non-monocrystalline stringers in the divots.
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