Threshold voltage extraction for producing a ramp signal with reduced process sensitivity
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United States of America Patent
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May 8, 2007
Grant Date -
Nov 30, 2006
app pub date -
May 26, 2005
filing date -
May 26, 2005
priority date (Note) -
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status (Latency Note)
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Abstract
A system for providing a threshold voltage (V.sub.T) includes a V.sub.T extractor that extracts the V.sub.T for a MOS transistor relative to a first voltage rail. An inversion circuit inverts the extracted V.sub.T (e.g., V.sub.T+V.sub.IN) relative to a reference voltage that is intermediate the first voltage rail and a second voltage rail and provides an output corresponding to the V.sub.T (e.g., V.sub.T+V.sub.IN) relative to the second voltage rail. The relative voltages at the voltage rails generally will depend on whether the V.sub.T is being extracted for a p-channel MOS transistor or an n-channel MOS transistor. The V.sub.T can be employed to generate a ramp voltage across a capacitor formed of another MOS transistor.
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