Rewriteable memory cell comprising a transistor and resistance-switching material in series
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United States of America Patent
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Issued Date -
Dec 7, 2006
app pub date -
Jun 2, 2005
filing date -
Jun 2, 2005
priority date (Note) -
Abandoned
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Abstract
A nonvolatile memory cell is provided, the cell comprising a transistor in series with resistance-switching material, which can be switched between at least two stable resistance states, for example a high-resistance state and a low-resistance state. In preferred embodiments the transistor is a TFT, having a channel region not formed in a monocrystalline wafer substrate. In preferred embodiments the transistor may have either a vertically oriented channel or a laterally oriented channel. Either embodiment can be formed in a monolithic three dimensional memory array in which multiple memory levels can be formed above a single substrate, forming a highly dense nonvolatile memory array.
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