METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING A DOPANT BLOCKING SUPERLATTICE
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United States of America Patent
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app pub date -
May 1, 2006
filing date -
Jun 26, 2003
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Abstract
A method for making a semiconductor device may include forming at least one metal oxide field-effect transistor (MOSFET) by forming a body, forming a dopant blocking superlattice adjacent the body, and forming a channel layer adjacent the dopant blocking superlattice and opposite the body. The dopant blocking superlattice may include a plurality of stacked groups of layers. Each group of layers of the dopant blocking superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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