Source contact and metal scheme for high density trench MOSFET
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United States of America Patent
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app pub date -
Jun 6, 2005
filing date -
Jun 6, 2005
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Abstract
A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source-body contact trench opened with sidewalls substantially perpendicular to a top surface into the source and body regions and filled with contact metal plug.
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