High density trench MOSFET with low gate resistance and reduced source contact space

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United States of America Patent

SERIAL NO

11204860

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Abstract

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A trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes gate contact trenches and source contact trenches opened through oxide insulation layers into the gate polysilicon and the body-source silicon regions. The gate contact trenches and the source contact trenches are filled with gate contact plug and source contact plug for electrically contacting the gate poly and the source-body regions such that the gate resistance is reduced and narrower source contact areas are achieved.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
M-MOS Semiconductor Sdn. Bhd.93350 KUCHING SARAWAK0

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hshieh, Fwu-Iuan Saratoga, CA 163 5209

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