High density trench MOSFET with low gate resistance and reduced source contact space

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United States of America Patent

APP PUB NO 20060273382A1
SERIAL NO

11204860

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Abstract

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A trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes gate contact trenches and source contact trenches opened through oxide insulation layers into the gate polysilicon and the body-source silicon regions. The gate contact trenches and the source contact trenches are filled with gate contact plug and source contact plug for electrically contacting the gate poly and the source-body regions such that the gate resistance is reduced and narrower source contact areas are achieved.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
M-MOS SEMICONDUCTOR SDN. BHD.93350 KUCHING SARAWAK0

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hshieh, Fwu-Iuan Saratoga, CA 163 5016

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (3)
* 2005/0272,208 Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique 3 2005
* 7872306 Structure of trench MOSFET and method for manufacturing the same 0 2007
* 2008/0169,505 Structure of Trench MOSFET and Method for Manufacturing the same 5 2007
 
DONGBU ELECTRONICS CO., LTD. (1)
* 2007/0145,497 SEMICONDUCTOR DEVICE 0 2006
 
Inpower Semiconductor Co., Ltd. (2)
7799642 Trench MOSFET and method of manufacture utilizing two masks 0 2007
* 2009/0085,099 TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING THREE MASKS 4 2007
 
DONGBU HITEK CO., LTD. (2)
7939410 Semiconductor device and manufacturing method thereof 0 2008
* 2009/0166,733 Semiconductor Device and Manufacturing Method Thereof 1 2008
 
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED (11)
8236651 Shielded gate trench MOSFET device and fabrication 10 2009
8193580 Shielded gate trench MOSFET device and fabrication 13 2009
* 2011/0039,383 Shielded gate trench MOSFET device and fabrication 20 2009
* 2011/0037,120 Shielded gate trench MOSFET device and fabrication 24 2009
* 8431457 Method for fabricating a shielded gate trench MOS with improved source pickup layout 10 2010
* 2011/0220,990 SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT 12 2010
8618601 Shielded gate trench MOSFET with increased source-metal contact 3 2011
8829603 Shielded gate trench MOSFET package 0 2011
8994101 Shielded gate trench MOS with improved source pickup layout 1 2013
9136370 Shielded gate trench MOSFET package 0 2014
9252265 Shielded gate trench MOS with improved source pickup layout 0 2015
 
CSMC TECHNOLOGIES FABI CO., LTD. (1)
9401422 Trench DMOS device with reduced gate resistance and manufacturing method thereof 0 2013
 
FORCE MOS TECHNOLOGY CO., LTD. (4)
* 7750398 Trench MOSFET with trench termination and manufacture thereof 1 2007
* 2009/0057,756 Trench MOSFET with Trench Termination and manufacture thereof 25 2007
* 8530313 Method of manufacturing trench MOSFET structures using three masks process 0 2011
* 2012/0021,580 METHOD OF MANUFACTURING TRENCH MOSFET STRUCTURES USING THREE MASKS PROCESS 0 2011
 
RICOH COMPANY, LTD. (2)
* 7741676 Semiconductor apparatus and manufacturing method using a gate contact section avoiding an upwardly stepped polysilicon gate contact 2 2007
* 2008/0079,081 Semiconductor apparatus and manufacturing method 8 2007
 
INFINEON TECHNOLOGIES AUSTRIA AG (2)
* 9076765 Semiconductor device comprising trench gate and buried source electrodes 0 2014
* 2014/0295,658 SEMICONDUCTOR DEVICE COMPRISING TRENCH GATE AND BURIED SOURCE ELECTRODES 0 2014
 
XINTEC INC. (2)
* 8772919 Image sensor package with trench insulator and fabrication method thereof 1 2010
* 2011/0193,210 IMAGE SENSOR PACKAGE WITH TRENCH INSULATOR AND FABRICATION METHOD THEREOF 3 2010
 
M-MOS SEMICONDUCTOR HK LTD (1)
* 2013/0049,107 TRENCH SEMICONDUCTOR POWER DEVICE AND FABRICATION METHOD THEREOF 2 2010
 
STMICROELECTRONICS S.R.L. (2)
* 9520468 Integrated power device on a semiconductor substrate having an improved trench gate structure 0 2014
* 2014/0138,739 INTEGRATED POWER DEVICE ON A SEMICONDUCTOR SUBSTRATE HAVING AN IMPROVED TRENCH GATE STRUCTURE 2 2014
 
MITSUBISHI ELECTRIC CORPORATION (3)
* 9484444 Semiconductor device with a resistance element in a trench 0 2008
* 2008/0290,407 SEMICONDUCTOR DEVICE 3 2008
* 8450796 Power semiconductor device 0 2009
 
ALPHA & OMEGA SEMICONDUCTOR, LTD. (1)
* 8058687 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET 5 2007
 
ROHM CO., LTD. (5)
9219127 SiC field effect transistor 0 2010
* 9293575 Semiconductor device 0 2012
* 2012/0126,249 SEMICONDUCTOR DEVICE 2 2012
8872263 Semiconductor device and method of manufacturing semiconductor device 0 2012
9406757 Semiconductor device and method of manufacturing semiconductor device 0 2014
 
KABUSHIKI KAISHA TOSHIBA (1)
* 9508809 III-N device with extended source and drain 0 2015
 
HYNIX SEMICONDUCTOR INC. (2)
* 8350321 Semiconductor device having saddle fin transistor and manufacturing method of the same 0 2009
* 2010/0219,467 SEMICONDUCTOR DEVICE HAVING SADDLE FIN TRANSISTOR AND MANUFACTURING METHOD OF THE SAME 6 2009
* Cited By Examiner