Gate contact and runners for high density trench MOSFET
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United States of America Patent
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app pub date -
Jul 14, 2005
filing date -
Jun 6, 2005
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Abstract
A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a buried trench-poly gate runner electrically contacting to a trench gate of the trenched MOSFET. The buried trench-poly gate runner for functioning as a gate runner to increase gate transmission area and a contact area to a gate contact metal for reducing a gate resistance.
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