Chemical vapor deposition reactor
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United States of America Patent
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N/A
Issued Date -
Dec 28, 2006
app pub date -
Jun 27, 2005
filing date -
Jun 27, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A chemical vapor deposition reactor is provided. The chemical vapor deposition reactor includes a deposition chamber, a substrate within the deposition chamber, at least two inlet ports extending into the deposition chamber for supplying a first and a second gases to the deposition chamber respectively and a particle source for supplying a plurality of solid particles to the deposition chamber. The first gas reacts with the second gas to form a film incorporating the plurality of solid particles upon the substrate. Films with composition varying across the growth direction are produced by the chemical vapor deposition reactor without the use of mask layers.
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