Method for Making a FINFET Including a Superlattice
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Jun 28, 2006
filing date -
Jun 26, 2003
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for making a semiconductor device may include forming at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite sides of the fin, and a gate overlying the fin. The fin may include at least one superlattice including a plurality of stacked groups of layers Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully