Gate electrode with double diffusion barrier and fabrication method of semiconductor device including the same
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United States of America Patent
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Issued Date -
Jan 4, 2007
app pub date -
Nov 1, 2005
filing date -
Jun 30, 2005
priority date (Note) -
Abandoned
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Abstract
A gate electrode with a double diffusion barrier and a fabrication method of a semiconductor device including the same are provided. The gate electrode of a semiconductor device includes: a silicon electrode; a double diffusion barrier formed on the silicon electrode and including at least a crystalline tungsten nitride-based layer; and a metal electrode formed on the double diffusion barrier.
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