Electroluminescent device comprising porous silicon
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United States of America Patent
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app pub date -
Jun 20, 2006
filing date -
Mar 20, 1995
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Abstract
An electroluminescent device comprises a porous silicon region adjacent a bulk silicon region, together with a top electrical contact of transparent indium tin oxide and a bottom electrical contact of aluminium. The device includes a heavily doped region to provide an ohmic contact. The porous silicon region is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device has a rectifying p-n junction within the porous silicon region.
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