Trenched MOSFET termination with tungsten plug structures
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app pub date -
Jan 12, 2006
filing date -
Jun 6, 2005
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Abandoned
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Abstract
A metal oxide semiconductor field effect transistor (MOSFET) device includes a termination area. The termination area has a trenched gate runner electrically connected to a trenched gate of said MOSFET. The MOSFET further includes a gate runner contact trench opened through an insulation layer covering the gate runner and into a gate dielectric filling in the trenched gate runner and the gate runner contact trench filled with a gate runner contact plug. The gate runner contact plug further includes a tungsten contact plug. The gate runner contact plug further includes a tungsten contact plug surrounded by a TiN/Ti barrier layer. The gate runner has a width narrower than one micrometer. The MOSFET further includes a field plate in electric contact with the gate runner contact plug. The gate dielectric filling in the trenched gate runner includes a gate polysilicon filling in the trenched gate runner in the termination area. The gate runner contact plug has a bottom portion extends through the insulation layer into the gate dielectric whereby contact areas are increased with the contact plug contacting the gate dielectric to reduce a gate contact resistance.
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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
M-MOS SEMICONDUCTOR SDN BHD | 1 SILICON DRIVE SAMA JAYA FREE INDUSTRIAL ZONE 93350 KUCHING SARAWAK |
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Hshieh, Fwu-Iuan | Saratoga, CA | 163 | 5785 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
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