Polishing composition and polishing method
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United States of America Patent
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app pub date -
Sep 6, 2006
filing date -
Mar 8, 2004
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Abandoned
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Abstract
To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: wherein R is a hydrogen atom, a C.sub.1-4 alkyl group, a C.sub.1-4 alkoxy group or a carboxylic acid group.
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