Method for Making a Semiconductor Device Including a Strained Superlattice Layer Above a Stress Layer
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United States of America Patent
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Jul 13, 2006
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Jun 26, 2003
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Abstract
A method for making a semiconductor device may include forming a stress layer, and forming a strained superlattice layer above the stress layer and including a plurality of stacked groups of layers. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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