Lower minimum retention voltage storage elements

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United States of America Patent

APP PUB NO 20070013425A1
SERIAL NO

11172084

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention relates to integrated circuit storage element topologies with reduced sensitivity to process mismatch. Such storage elements have lower minimum retention voltage that enables lower standby voltage and therefore lower standby leakage and standby power.

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Patent Owner(s)

Patent OwnerAddress
INTELLECTUAL VENTURE FUNDING LLC502 E JOHN STREET CARSON CITY NV 89706

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burr, James B Foster City, CA 112 3273
Koniaris, Kleanthes G Palo Alto, CA 28 410
Masleid, Robert P Monte Sereno, CA 106 1039

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