Deposition apparatus for semiconductor processing
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United States of America Patent
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Issued Date -
Feb 1, 2007
app pub date -
Jul 31, 2006
filing date -
Jul 29, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a deposition apparatus having a reduced reaction zone volume. In some embodiments a deposition apparatus is provided with a process chamber having a raised reaction zone. Other embodiments of the present invention provide a deposition apparatus with a process chamber having a vertical baffle ring. Embodiments of the present invention provide a reduced reaction zone or volume which promotes uniform gas flow pattern and faster gas exchange.
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