Thin film transistor, circuit apparatus and liquid crystal display
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United States of America Patent
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Oct 27, 2009
Grant Date -
Feb 1, 2007
app pub date -
Sep 1, 2006
filing date -
Mar 25, 2002
priority date (Note) -
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Abstract
A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (W.sub.s) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (W.sub.d) of the junction face between the above channel region and the drain region.
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