Non-volatile memory cell using high-K material and inter-gate programming
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United States of America Patent
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Jul 29, 2008
Grant Date -
Feb 1, 2007
app pub date -
Sep 7, 2006
filing date -
Jan 21, 2004
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Abstract
A non-volatile memory device has a channel region between source/drain regions, a floating gate, a control gate, a first dielectric region between the channel region and the floating gate, and a second dielectric region between the floating gate and the control gate. The first dielectric region includes a high-K material. The non-volatile memory device is programmed and/or erased by transferring charge between the floating gate and the control gate via the second dielectric region.
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