Electrical interconnect structures for integrated circuits and methods of manufacturing the same
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United States of America Patent
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Nov 13, 2007
Grant Date -
Feb 1, 2007
app pub date -
Apr 9, 2004
filing date -
Apr 9, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed are interconnect structures and methods which utilize a bonding surface comprising copper nitride. The interconnect structures include a bonding surface comprising copper nitride which is effective at preventing oxidation and/or other unwanted corrosion of the underlying conductive material while providing the basis for a high conductivity bond. The copper nitride bonding surface provides a relatively non-conductive, corrosion-resistant bonding surface while at the same time being readily transformed into a conductive layer at or just prior to the time of bonding.
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