Variable source resistor for flash memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20070030736A1
SERIAL NO

11196093

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Abstract

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In one embodiment of the invention, a flash memory is provided that includes: a plurality of flash memory cells sharing a common drain node and a common source node; and a current source that controls the current into the common source node.

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Patent Owner(s)

Patent OwnerAddress
LATTICE SEMICONDUCTOR CORPORATION111 SW 5TH AVENUE SUITE 700 PORTLAND OR 97204

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fong, Steven Santa Clara, CA 18 198
Fontana, Fabiano San Jose, CA 33 380

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