Method for depositing silicon-containing films
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United States of America Patent
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Issued Date -
Feb 8, 2007
app pub date -
Jul 7, 2006
filing date -
Jul 8, 2005
priority date (Note) -
Abandoned
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Abstract
Methods for forming silicon containing films using silylamine moieties are disclosed. In some embodiments, silylamine moieties are employed to deposit silicon-nitrogen, silicon-oxygen, or silicon-nitrogen-oxygen materials at temperatures of less than 550.degree. C. In some embodiments methods are practiced within process chambers adapted to contain a single substrate as well as within process chambers adapted to contain a plurality of substrates, where the silylamine moieties are conveyed to the chambers in across flow type manner.
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