Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
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United States of America Patent
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Issued Date -
Feb 8, 2007
app pub date -
Jul 1, 2005
filing date -
Jul 6, 2001
priority date (Note) -
Abandoned
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Abstract
HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12'' substrates.
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