Method for fabricating a semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7524726
APP PUB NO 20070042552A1
SERIAL NO

11504740

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A process for fabricating a power semiconductor device is disclosed.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL RECTIFIER CORPORATIONEL SEGUNDO, CA1022

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ma, Ling Torrance , US 42 127

Cited Art Landscape

Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
5430315 Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current 59 1994
 
Episil Technologies Inc. (1)
* 6489204 Save MOS device 34 2001
 
INTERNATIONAL RECTIFIER CORPORATION (3)
6838735 Trench FET with non overlapping poly and remote contact therefor 14 2000
6580123 Low voltage power MOSFET device and process for its manufacture 81 2001
* 7081388 Self aligned contact structure for trench device 6 2005
 
VISHAY-SILICONIX (1)
* 2005/0224,891 Self aligned contact in a semiconductor device and method of fabricating the same 6 2004
 
NEXPERIA B.V. (1)
6833583 Edge termination in a trench-gate MOSFET 8 2002
 
INFINEON TECHNOLOGIES AG (1)
6806533 Semiconductor component with an increased breakdown voltage in the edge area 65 2003
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
SINOPOWER SEMICONDUCTOR, INC. (2)
* 8709895 Manufacturing method power semiconductor device 0 2011
* 2012/0112,268 TERMINATION STRUCTURE OF POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 2 2011
 
INFINEON TECHNOLOGIES AUSTRIA AG (2)
* 8652906 Method for manufacturing a semiconductor device and semiconductor device 0 2013
* 2013/0252,423 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 0 2013
* Cited By Examiner

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