III-nitride light emitting device with double heterostructure light emitting region
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United States of America Patent
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Issued Date -
Mar 1, 2007
app pub date -
Aug 24, 2005
filing date -
Aug 24, 2005
priority date (Note) -
Abandoned
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Abstract
A III-nitride light emitting layer is disposed between an n-type region and a p-type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.
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