Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
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United States of America Patent
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Apr 10, 2012
Grant Date -
Mar 1, 2007
app pub date -
Oct 4, 2006
filing date -
Aug 22, 2000
priority date (Note) -
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Abstract
A method for selectively aligning and positioning semiconductor nanowires on a substrate by providing a substrate; patterning electrodes on a surface of the substrate; conditioning the surface of the substrate to attach semiconductor nanowires to the surface by functionalizing the surface with a first functional group having an affinity for the semiconductor nanowires; providing an environment in contact with the electrodes, the environment having suspended therein the semiconductor nanowires; and providing an electric field between the electrodes, thereby causing the nanowires in the environment to align between and electrically connect the electrodes to thereby form a semiconducting channel between the electrodes.
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