Method of fabricating silicon thin film layer
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United States of America Patent
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Issued Date -
Mar 1, 2007
app pub date -
Aug 3, 2006
filing date -
Aug 26, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of fabricating a high-quality silicon thin layer includes making Xe ions generated by RF power collide with a silicon target material layer to generate silicon particles from the silicon target material layer; and depositing the silicon particles on a predetermined substrate. The method is performed under a pressure of about 5 mTorr or lower and at an RF power of about 200 W or more. In this method, the silicon thin layer is thermally stabilized, and the amount of gas captured in silicon crystals during the sputtering process is greatly reduced.
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