Semiconductor device including a front side strained superlattice layer and a back side stress layer
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United States of America Patent
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app pub date -
Sep 25, 2006
filing date -
Jun 26, 2003
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Abstract
A semiconductor device may include a semiconductor substrate having front and back surfaces, a strained superlattice layer adjacent the front surface of the semiconductor substrate and comprising a plurality of stacked groups of layers, and a stress layer on the back surface of the substrate and comprising a material different than the semiconductor substrate. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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