Semiconductor devices and fabrication methods thereof
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United States of America Patent
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Issued Date -
Mar 22, 2007
app pub date -
Sep 19, 2005
filing date -
Sep 19, 2005
priority date (Note) -
Abandoned
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Abstract
Semiconductor devices and fabrication methods thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an tungsten-containing barrier is conformably formed in the opening, with a thickness less than 50 .ANG.. A tungsten layer is formed over the atomic layer deposited (ALD) tungsten-containing barrier to fill the opening.
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