Memory with high dielectric constant antifuses and method for using at low voltage
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United States of America Patent
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Issued Date -
Mar 29, 2007
app pub date -
Jul 1, 2005
filing date -
Jul 1, 2005
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Abandoned
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Abstract
A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using antifuse materials having higher dielectric constant and higher acceleration factor than silicon dioxide, and by using diodes having lower band gaps than silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example hafnium silicon oxynitride or hafnium silicon oxide are particularly effective. Diode materials with band gaps lower than silicon, such as germanium or a silicon-germanium alloy are particularly effective.
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