Amine-free deposition of metal-nitride films

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7550385
APP PUB NO 20070075427A1
SERIAL NO

11240005

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Abstract

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A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
BEIJING XIAOMI MOBILE SOFTWARE CO., LTD.BEIJING, CN391

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dominguez, Juan E Hillsboro, US 39 298
Dubin, Valery M Portland, US 117 3197
Johnston, Steven W Portland, US 25 166
Lavoie, Adrien R St. Helens, US 55 379
O'Brien, Kevin P Portland, US 46 282
Peck, John D West Seneca, US 10 73
Peters, David W Tonawanda, US 50 533
Thompson, David M East Amherst, US 81 1001

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
6337151 Graded composition diffusion barriers for chip wiring applications 17 1999
 
NOVELLUS SYSTEMS, INC. (1)
* 6428859 Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) 219 2001
 
ENTEGRIS, INC. (1)
6015917 Tantalum amide precursors for deposition of tantalum nitride on a substrate 164 1998
 
TOKYO ELECTRON LIMITED (1)
* 2007/0054,046 Method of forming a tantalum-containing layer from a metalorganic precursor 13 2005
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2010/0140,717 TUNABLE GATE ELECTRODE WORK FUNCTION MATERIAL FOR TRANSISTOR APPLICATIONS 8 2010
 
INTEL CORPORATION (1)
8319287 Tunable gate electrode work function material for transistor applications 3 2010
 
SAMSUNG ELECTRONICS CO., LTD. (1)
* 8173356 Three dimensional scaffold and method of fabricating the same 0 2006
 
JX NIPPON MINING & METALS CORPORATION (2)
* 8247301 Substrate and manufacturing method therefor 0 2008
* 2010/0244,259 SUBSTRATE AND MANUFACTURING METHOD THEREFOR 0 2008
* Cited By Examiner

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