US Patent Application No: 2007/0075,427

Number of patents in Portfolio can not be more than 2000

Amine-free deposition of metal-nitride films

ALSO PUBLISHED AS: 7550385

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Abstract

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A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTEL CORPORATIONSANTA CLARA, CA23204

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dominguez, Juan E Hillsboro, OR 58 162
Dubin, Valery M Portland, OR 177 2197
Johnston, Steven W Portland, OR 36 117
Lavoie, Adrien R Beaverton, OR 82 210
O'Brien, Kevin P Portland, OR 63 225
Peck, John D West Seneca, NY 14 43
Peters, David W North Tonawanda, NY 51 394
Thompson, David M Overland Park, KS 103 806

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Patent Info (Count) # Cites Year
 
TOKYO ELECTRON LIMITED (2)
* 8,026,168 Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming 0 2007
7,985,680 Method of forming aluminum-doped metal carbonitride gate electrodes 0 2008
* Cited By Examiner