US Patent Application No: 2007/0075,427

Number of patents in Portfolio can not be more than 2000

Amine-free deposition of metal-nitride films

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Abstract

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A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
BEIJING XIAOMI MOBILE SOFTWARE CO., LTD.BEIJING, CN303

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dominguez, Juan E Hillsboro, OR 39 244
Dubin, Valery M Portland, OR 117 2916
Johnston, Steven W Portland, OR 25 149
Lavoie, Adrien R St. Helens, OR 55 327
O'Brien, Kevin P Portland, OR 45 265
Peck, John D West Seneca, NY 9 63
Peters, David W Tonawanda, NY 45 503
Thompson, David M East Amherst, NY 80 955

Cited Art Landscape

Patent Info (Count) # Cites Year
 
ASM GENITECH KOREA LTD. (1)
* 2004/0009,307 Thin film forming method 19 2003
 
NOVELLUS SYSTEMS, INC. (1)
* 6,428,859 Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) 204 2001
 
INTEL CORPORATION (1)
* 2006/0223,300 Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 15 2005
 
ENTEGRIS, INC. (1)
* 6,015,917 Tantalum amide precursors for deposition of tantalum nitride on a substrate 162 1998
 
TOKYO ELECTRON LIMITED (1)
* 2007/0054,046 Method of forming a tantalum-containing layer from a metalorganic precursor 12 2005
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
SAWABE, ATSUHITO (1)
* 9,353,458 Base substrate for epitaxial diamond film, method for producing the base substrate for epitaxial diamond film, epitaxial diamond film produced with the base substrate for epitaxial diamond film, and method for producing the epitaxial diamond film 0 2007
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 9,385,034 Carbonization of metal caps 0 2007
 
TOKYO ELECTRON LIMITED (4)
* 8,026,168 Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming 0 2007
* 2009/0045,514 SEMICONDUCTOR DEVICE CONTAINING AN ALUMINUM TANTALUM CARBONITRIDE BARRIER FILM AND METHOD OF FORMING 4 2007
* 2009/0246,952 METHOD OF FORMING A COBALT METAL NITRIDE BARRIER FILM 14 2008
7,985,680 Method of forming aluminum-doped metal carbonitride gate electrodes 1 2008
* Cited By Examiner