Method and apparatus for producing spherical silicon single-crystal
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United States of America Patent
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Issued Date -
Apr 12, 2007
app pub date -
Oct 6, 2006
filing date -
Oct 6, 2005
priority date (Note) -
Abandoned
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Abstract
Disclosed is a method for producing a spherical silicon single-crystal, which comprises the steps of heating and melting a silicon material held in a vessel, keeping the molten silicon material at a temperature around its melting point for a given time-period to partly solidify the molten silicon material, and dropping the molten silicon material including a solidified portion, from the vessel into a gas phase. The spherical silicon single-crystal production method of the present invention makes it passable to obtain a spherical silicon single-crystal having a higher degree of crystallinity with enhanced efficiency in a simplified manner.
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