SEMICONDUCTORS AND METHODS OF MAKING

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United States of America Patent

APP PUB NO 20070080455A1
SERIAL NO

11163235

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor having an insulating layer, a contact pad, a via, and a sacrificial dielectric cap is provided. The contact pad is embedded in the insulating layer, where the contact pad has a top metal layer of copper. The via creates an opening over the top metal layer. The sacrificial dielectric cap is over at least the top metal layer.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES INCGRAND CAYMAN CAYMAN ISLANDS GRAND CAYMAN CAYMAN ISLANDS

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clevenger, Lawrence A LaGrangeville, NY 715 4465
Cullinan-Scholl, Mary C Hopewell Junction, NY 3 46
Daubenspeck, Timothy H Colchester, VT 147 1759
Landers, William F Wappingers Falls, NY 20 383
Melville, Ian D Highland, NY 42 338
Muzzy, Christopher D Burlington, VT 130 1011
Quon, Roger A Rhinebeck, NY 64 297
Srivastava, Kamalesh K Wappingers Falls, NY 40 736
Zupanski-Nielsen, Donna S Yorktown Heights, NY 22 96

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