Method for producing practical thermoelectric devices using quantum confinement in nanostructures
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United States of America Patent
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Issued Date -
Apr 19, 2007
app pub date -
Oct 14, 2005
filing date -
Oct 14, 2005
priority date (Note) -
Abandoned
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Abstract
The present invention provides a method for preparing a thermoelectric device comprising depositing a film of thermoelectric material on a substrate, locating one or more electrodes within the thermoelectric film, partially oxidizing the thermoelectric film to form an oxide layer and melting the oxide layer to form an electrical insulating and protective barrier on a top surface of the film.
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